Breakthrough: Lowest threshold achieved in lasers at λ~4.6 µm by OU researchers

Recently, our group has demonstrated the room temperature operation of InAs-based IC lasers in cw mode at λ~4.6 µm. Which makes this possible is the innovative design on the waveguide structure: a inner cladding layer composed of InAs/AlSb superlattice was inserted between the lightly-doped InAs spacer layer and heavily-doped InAs outer cladding layer. This approach greatly reduced the free-carrier absorption loss due to the heavily-doped InAs and meanwhile increased the optical confinement in the active region.

One month later, this result has been reported as "research highlight" in Nature Photonics (link ).

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